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vmmk-2403 2 to 4 ghz gaas high linearity lna in wafer level package data sheet description avagosfvmmk-2403fisfanfeasy-to-use,fhighflinearityflowf noisefampliferfinfafminiaturizedfwaferflevelfpackagef (wlp).ftheflowfnoisefandfunconditionallyfstablefperfor - mancefmakesfthisfampliferfidealfasfafprimaryforfsubse - quentfgainfblockfoffanfrffreceiverfinfapplicationsffromf 2C4ghz.faf3v,f38mafpowerfsupplyfisfrequiredfforfoptimalf performance.f thisfampliferfisffabricatedfwithfenhancementfe-phemtf technologyfandfindustryfleadingfrevolutionaryfwaferflevelf package.fthefgaascapfwaferflevelfsub-miniaturefleadlessf packagefisfsmallfandfultrafthinfyetfcanfbefhandledfandf placedfwithfstandardf0402fpickfandfplacefassembly.fthisf productfisfeasyftofusefsincefitfrequiresfonlyfpositivefdcf voltagesfforfbiasfandfnofmatchingfcoefcientsfarefrequiredf forfimpedancefmatchingftof50f fsystems. wlp 0402, 1mm x 0.5mm x 0.25 mm attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 50v esd human body model = 125v refer to avago application note a004r: electrostatic discharge, damage and control. pin connections (top view) note: ff=fdevicefcode yf=fmonthfcode features ? 1fxf0.5fmmfsurfacefmountfpackage ? ultrathinf(0.25mm) ? unconditionallyfstable ? 50ohmfinputfandfoutputfmatch ? rohs6f+fhalogenffree specifcations (vdd = 3.0v, idd = 37ma) ? outputfip3:f28dbm ? small-signalfgain:f16db ? noiseffigure:f1.7db applications ? 2.4fghz,f3.5ghzffwlanfandfwimaxfnotebookfcomputer,f accessfpointfandfmobilefwirelessfapplications ? 802.16f&f802.20fbwafsystems ? radar,fradiofandfecmfsystems fy fy output / vdd input / vc amp input / vc output / vdd
2 table 1. absolute maximum ratings [1] sym parameters/condition unit absolute max vd supplyfvoltagef(rffoutput) f[2] v 5 id devicefcurrentf [2] ma 60 p in,fmax cwfrffinputfpowerf(rffinput) f[3] dbm +20 p diss totalfpowerfdissipation mw 300 tch maxfchannelftemperature c 150 jc thermalfresistance f[4] c/w 160 notes 1.f operationfinfexcessfoffanyfoffthesefconditionsfmayfresultfinfpermanentfdamageftofthisfdevice. 2.f biasfisfassumedfdcfquiescentfconditions 3.f withfthefdcf(typicalfbias)fandfrffappliedftofthefdevicefatfboardftemperatureftbf=f25c 4.f thermalfresistancefisfmeasuredffromfjunctionftofboardfusingfirfmethod table 2. dc and rf specifcations t af =f25c,ffrequencyf=f3fghz,fvdf=f3v,fz inf =fz outf =f50 f(unlessfotherwisefspecifed) sym parameters/condition unit minimum typ. maximum id devicefcurrent ma 30 37 45 nf f[1,2] noiseffiguref db C 1.7 2.2 ga f[1,2] associatedfgainf db 14 16 17 oip3 f[1,2,3] outputf3rdforderfinterceptf dbm +26 +27.8 C p-1db [1,2] outputfpowerfatf1dbf f gainfcompression dbm +16.5 C irl f[1,2] inputfreturnfloss db C -12 C orl f[1,2] outputfreturnfloss db C -12 C notes: 1.f lossesfofftestfsystemsfhavefbeenfde-embeddedffromffnalfdata 2.f measurefdatafobtainedffromfwafer-probing 3.f oip3ftestfcondition:ff1=3.0ghz,ff2=3.01ghz,fpin=-20dbm
3 product consistency distribution charts at 3.0 ghz, vd = 3v id, lsl=0.030 a, nominal=0.037 a, usl=0.045 a gain @ 3ghz, lsl=14 db, nominal=16 db, usl=18 db oip3 at 3ghz, lsl=26 dbm, nominal=27.85 dbm note:fdistributionfdatafbasedfonf500fpartfsamplefsizeffromfskewflotsfduringfinitialfcharacterization.f measurementsfwerefobtainedfusingf300umfg-sfproductionfwaferfprobe. futurefwafersfallocatedftofthisfproductfmayfhavefnominalfvaluesfanywherefbetweenfthefupperfandflowerflimits. nf @ 3ghz, nominal=1.69 db, usl=2.20 db lsl usl .5 .6 .7 .8 .9 1 1.1 1.2 1.3 1.4 1.5 1.6 lsl 27 28 29 30 lsl usl 15 16 17 lsl usl .031 .033 .035 .037 .039 .041 .043
4 vmmk-2403 typical performance (t a f=f25c,fvddf=f3v,fiddf=f38ma,fz in f=fz out f=f50f funlessfnoted) figure 1. small-signal gain [1] figure 3. input return loss [1] figure 5. isolation [1] figure 2. noise figure [1] figure 4. output return loss [1] figure 6. output ip3 & output p1db [1,2] notes: 1.f dataftakenfonfafg-s-gfprobefsubstrateffullyfde-embeddedftofthefreferencefplanefoffthefpackagef 2.f outputfip3fdataftakenfatfpin=-15dbm 0 5 10 15 20 1 2 3 4 5 6 frequency (ghz) s21 (db) 1 2 3 4 5 1 2 3 4 5 6 frequency (ghz) noisefigure (db) -20 -15 -10 -5 0 1 2 3 4 5 6 frequency (ghz) s11 (db) -30 -20 -10 0 1 2 3 4 5 6 frequency (ghz) s22 (db) -30 -20 -10 0 1 2 3 4 5 6 frequency (ghz) s12 (db) 5 15 25 35 1 2 3 4 5 6 frequency (ghz) ip3 & p1db (dbm) oip3 op1db
5 vmmk-2403 typical performance f(continue) (t a f=f25c,fvddf=f3v,fiddf=f38ma,fz in f=fz out f=f50f funlessfnoted) figure 7. gain over vdd [1] figure 9. input return loss over vdd [1] figure 11. output return loss over vdd [1] figure 8. total current [1] figure 10 noise figure over vdd [1] figure 12. output p1db over vdd [1] notes: 1.f dataftakenfonfafg-s-gfprobefsubstrateffullyfde-embeddedftofthefreferencefplanefoffthefpackagef 0 5 10 15 20 1 2 3 4 5 6 frequency (ghz) s21 (db) -30 -20 -10 0 1 2 3 4 5 6 frequency (ghz) s11 (db) 5v 4v 3v -20 -15 -10 -5 0 1 2 3 4 5 6 frequency (ghz) s22 (db) 5v 4v 3v 0 20 40 60 80 1 2 3 4 5 6 vdd (v) idd (ma) 1.0 2.0 3.0 4.0 5.0 1 2 3 4 5 6 frequency (ghz) noisefigure (db) 3v 4v 5v 5 10 15 20 1 2 3 4 5 6 frequency (ghz) op1db (dbm) 3v 4v 5v 5v 4v 3v
6 vmmk-2403 typical performance f(continue) (t a f=f25c,fvddf=f3v,fiddf=f38ma,fz in f=fz out f=f50f funlessfnoted) figure 13. output p-1db over temp [3] figure 15. gain over temp [3] figure 17. input return loss over temp [3] figure 14. output ip3 over vdd [2,3] figure 16 noise figure over temp [3] figure 18. output return loss over temp [3] notes: 1.f dataftakenfonfafg-s-gfprobefsubstrateffullyfde-embeddedftofthefreferencefplanefoffthefpackagef 2.f outputfip3fdataftakenfatfpin=-15dbm 3.f overftempfdataftakenfonfaftestffxturef(figuref20)fwithoutfde-embedding 0 5 10 15 20 1 2 3 4 5 6 frequency (ghz) op1db (dbm) 25c -40c 85c 0 5 10 15 20 1 2 3 4 5 6 frequency (ghz) s21 (db) 25c 85c -40c -30 -20 -10 0 1 2 3 4 5 6 frequency (ghz) s11 (db) 15 20 25 30 35 1 2 3 4 5 6 frequency (ghz) oip3 (dbm) 1.0 2.0 3.0 4.0 5.0 1 2 3 4 5 6 frequency (ghz) noisefigure (db) -30 -20 -10 0 1 2 3 4 5 6 frequency (ghz) s22 (db) 25c -40c 85c 25c 85c -40c -40c 25c 85c 3v 4v 5v
7 vmmk-2403 typical s-parameters t a f=f25c,fvddf=f3v,fiddf=f38ma,fz in f=fz out f=f50f funlessfnoted) freq ghz s11 s21 s12 s22 mag db phase mag db phase mag db phase mag db phase 1 0.65 -3.79 113.52 5.47 14.76 -144.36 0.04 -28.13 87.94 0.28 -11.18 -10.64 1.5 0.36 -8.82 81.05 7.05 16.97 -178.05 0.05 -24.97 60.57 0.27 -11.46 -58.54 2.0 0.13 -17.40 55.74 7.16 17.09 155.06 0.06 -24.10 42.05 0.24 -12.53 -87.61 2.5 0.03 -31.80 -133.91 6.71 16.53 134.46 0.06 -23.90 30.73 0.21 -13.69 -100.64 3.0 0.12 -18.13 -151.55 6.12 15.74 117.90 0.06 -23.97 23.43 0.20 -14.03 -105.66 3.5 0.20 -14.05 -163.87 5.55 14.88 104.00 0.06 -24.04 19.19 0.20 -13.96 -107.15 4.0 0.25 -12.00 -174.32 5.04 14.05 91.92 0.06 -24.14 15.78 0.22 -13.22 -106.91 4.5 0.29 -10.89 175.98 4.58 13.22 81.08 0.06 -24.14 13.35 0.24 -12.42 -108.59 5.0 0.31 -10.13 167.30 4.19 12.44 71.14 0.06 -24.12 12.04 0.26 -11.58 -110.59 5.5 0.33 -9.59 159.43 3.84 11.69 61.94 0.06 -24.07 10.81 0.29 -10.73 -113.90 6.0 0.35 -9.16 151.41 3.54 10.97 53.04 0.06 -24.01 9.65 0.32 -9.87 -118.40 6.5 0.36 -8.91 143.69 3.26 10.27 44.57 0.06 -23.89 8.81 0.35 -9.03 -123.20 7.0 0.37 -8.69 136.41 3.02 9.59 36.31 0.07 -23.74 8.13 0.39 -8.27 -128.23 7.5 0.38 -8.50 129.27 2.79 8.91 28.19 0.07 -23.58 7.21 0.42 -7.52 -133.56 8.0 0.38 -8.36 122.37 2.58 8.25 20.21 0.07 -23.39 6.48 0.46 -6.81 -139.38 8.5 0.39 -8.21 115.19 2.39 7.56 12.37 0.07 -23.22 5.74 0.49 -6.17 -144.98 9.0 0.39 -8.12 108.46 2.20 6.85 4.43 0.07 -23.06 4.98 0.53 -5.53 -151.26 9.5 0.40 -7.98 101.84 2.02 6.11 -3.50 0.07 -22.83 4.19 0.56 -4.98 -158.01 10.0 0.41 -7.83 95.04 1.84 5.30 -11.35 0.07 -22.60 3.57 0.60 -4.39 -164.68 10.5 0.41 -7.72 88.39 1.66 4.40 -19.19 0.08 -22.34 2.72 0.64 -3.88 -172.30 11.0 0.42 -7.59 82.22 1.48 3.39 -26.92 0.08 -22.09 2.06 0.67 -3.42 179.91 11.5 0.43 -7.42 76.20 1.29 2.22 -34.30 0.08 -21.79 1.40 0.71 -2.99 171.62 12.0 0.43 -7.25 70.01 1.10 0.82 -41.13 0.08 -21.46 0.40 0.74 -2.67 162.75
8 figure 19. usage of the vmmk-2403 figure 20. evaluation/test board (available to qualifed customer request) vmmk-2403 application and usage (please always refer to the latest application note an5378 in website) biasing and operation thefvmmk-2403fisfnormallyfbiasedfwithfafpositivefdrainf supplyfconnectedftofthefoutputfpinfthroughfanfexternalf bias-teefandfwithfbypassfcapacitorsfasfshownfinffiguref 19.fthefrecommendedfdrainfsupplyfvoltagefisf3fvfandf thefcorrespondingfdrainfcurrentfisfapproximatelyf38ma.f aspectsfoffthefampliferfperformancefmayfbefimprovedf overfafnarrowerfbandwidthfbyfapplicationfoffadditionalf conjugate,flinearity,forflowfnoisef( opt)fmatching. figure 21. example application of vmmk-2403 at 3.5ghz amp bias-tee input vdd output size: 1.1 mm x 0.6 mm (0402 component) 50 ohm line 50 ohm line 100 pf 0.1 uf output pad ground pad input pad amp input vdd output output pad ground pad input pad 50 ohm line 50 ohm line 100 pf 0.1 uf 15 nh 100 pf 100 pf size: 1.1 mm x 0.6 mm (0402 component) biasingfthefdevicefatf3vfresultsfinfslightlyflowerfnoisef fgure.finfaftypicalfapplication,fthefbias-teefcanfbefcon - structedfusingflumpedfelements.fthefvaluefoffthefoutputf inductorfcanfhavefafmajorfefectfonfbothflowfandfhighf frequencyfoperation.fthefdemofboardfusesfaf15fnhf inductorfwhichfprovidesfanfoptimumfvaluefforf2ftof4fghf operation.fiffoperationfisfdesiredfatffrequenciesfhigherf thanf4fghzfthenfafsmallerfvaluefsuchfasf8.2fnhfmayfbef requiredftofkeepfthefselffresonantffrequencyfhigherfthanf thefmaximumfdesiredffrequencyfoffoperation.f anotherfapproachfforfbroadbandingfthefvmmk-2403fisf tofseriesftwofdiferentfvaluefinductorsfwithfthefsmallerf valuefinductorfplacedfclosestftofthefdevicefandffavoringf thefhigherffrequencies.ftheflargerfvaluefinductorfwillfthenf oferfbetterflowffrequencyfperformancefbyfnotfloadingf thefoutputfoffthefdevice.fthefparallelfcombinationfoffthef 100pffandf0.1uffcapacitorsfprovidefaflowfimpedancef infthefbandfoffoperationfandfatflowerffrequenciesfandf shouldfbefplacedfasfclosefasfpossibleftofthefinductor.fthef lowffrequencyfbypassfprovidesfgoodfrejectionfoffpowerf supplyfnoisefandfalsofprovidesfaflowfimpedanceftermi - nationfforfthirdforderflowffrequencyfmixingfproductsf thatfwillfbefgeneratedfwhenfmultiplefin-bandfsignalsfaref injectedfintofanyfamplifer. referfthefabsolutefmaximumfratingsftablefforfallowedfdcf andfthermalfconditions. s parameter measurements thefs-parametersfarefmeasuredfonfaf.016finchfthickf ro4003fprintedfcircuitftestfboard,ffusingfg-s-gf(groundf signalfground)fprobes.fcoplanarfwaveguidefisfusedftof providefafsmoothftransitionffromfthefprobesftofthefdevicef underftest.fthefpresencefoffthefgroundfplanefonfftopfoff theftestfboardfresultsfinfexcellentfgroundingfatfthefdevicef underftest.fafcombinationfoffsoltf(shortf-fopenf-floadf -fthru)fandftrlf(thruf-frefectf-fline)ffcalibrationftech - niquesfarefusedftofcorrectfforfthefefectsfofftheftestfboard,f resultingfinfaccuratefdevicefs-parameters.fthefreferencef planefforfthefsfparametersfisffatfthefedgefoffthefpackage. thefproductfconsistencyfdistributionfchartsfshownfonf pagef2frepresentfdataftakenfbyfthefproductionfwaferfprobef stationfusingfaf300umfg-sfwaferfprobe.fthefground-signalf probingfthatfisfusedfinfproductionfallowsfthefdeviceftofbef probedfdirectlyfatfthefdevicefwithfminimalfcommonfleadf inductanceftofground.fthereforeftherefwillfbefafslightfdif - ferencefinfthefnominalfgainfobtainedfatftheftestffrequencyf usingfthef300umfg-sfwaferfprobefversusfthef300umfg-s-gf printedfcircuitfboardfsubstratefmethod.f
9 recommended smt attachment thefvmmkfpackagedfdevicesfarefcompatiblefwithfhighf volumefsurfacefmountfpcbfassemblyfprocesses. manual assembly for prototypes 1.f followfesdfprecautionsfwhilefhandlingfpackages. 2.f handlingfshouldfbefalongfthefedgesfwithftweezersforf fromftopsidefiffusingfafvacuumfcollet. 3.f recommendedfattachmentfisfsolderfpaste.fpleasef seefrecommendedfsolderfrefowfprofle.fconductivef epoxyfisfnotfrecommended.fhandfsolderingfisfnotf recommended. 4.f applyfsolderfpastefusingfeitherfafstencilfprinterforf dotfplacement.fthefvolumefoffsolderfpastefwillfbef dependentfonfpcbfandfcomponentflayoutfandfshouldf befcontrolledftofensurefconsistentfmechanicalfandf electricalfperformance.f excessive solder will degrade rf performance. ff 5.f followfsolderfpastefandfvendorsfrecommendationsf whenfdevelopingfafsolderfrefowfprofle.fafstandardf proflefwillfhavefafsteadyframpfupffromfroomf temperatureftofthefpre-heatftempftofavoidfdamagef dueftofthermalfshock.ff 6.f packagesfhavefbeenfqualifedftofwithstandfafpeakf temperaturefoff260 cfforf20ftof40fsec.fverifyfthatfthef proflefwillfnotfexposefdevicefbeyondftheseflimits. 7.f cleanfofffuxfperfvendorsfrecommendations. 8.f cleanfthefmodulefwithfacetone.frinsefwithfalcohol.ff allowfthefmoduleftofdryfbeforeftesting. outline drawing notes: 1.f ? findicatesfpinf1 2.f dimensionsfarefinfmillimetersf 3.f padfmaterialfisfminimumf5.0fumfthickfau suggested pcb material and land pattern notes: 1.f 0.010frogersfro4350 fy 0.25mm 0.5 mm 1.00mm 0 . 2 m m 0 . 3 m m 0 . 7 m m 0. 8mm 0 . 5 m m top view side view bottom view 3 figure 5. recommended pcb layout for vmmk devices 1.2 (0.048) 0.100 (0.004) 0.500 (0.020) 0.500 (0.020) 0.400 (0.016) 0.100 (0.004) 0.254 dia pth (0.010) 4pl 0.400 dia (0.016) 4pl 0.200 (0.008) 0.381 (0.015) 2pl 0.200 (0.008) part of input circuit part of output circuit 0.076 max (0.003) 2pl - see discussion solder mask 0.7 (0.028) printed circuit board material and vias the pcb board material stack used to qualify the device consists of 40 mil thickness fr4 core material with one ounce copper for both top and bottom metal. soldering onto materials with greater thermal expansion than fr5 or high tg fr4 should be avoided. board materials with high cte, such as tefon, may lead to damage of the base of the gaas package which contains the device circuitry or may lead to damage of the cap of the gaas package which defnes the air cavity, or may lead to damaging both. low loss microwave materials such as ro4003 and ro4350 have ctes similar to fr4 type material and should be acceptable pcb materials. recommended pcb foot p rint and grounding establishing a proper ground for either the source leads of the vmmk-1xxx series or the common leads of the vmmk-2xxx and -3xxx series is paramount. the rec- ommended printed circuit board via pattern is shown in figure 5. this is a non-solder mask defned footprint (nsmd). the outline of the solder mask that borders the device is shown by the area indicated in green. the recommended footprint does not require any plated through holes under the device. modeling and tests indicate that placing vias adjacent to (within .003) and on either side of the device as shown in figure 5 provides good grounding for the vmmk-2xxx and vmmk-3xxx series devices when mounted on .010 thickness ro4350 printed circuit board material. this technique also applies when using the vmmk-1xxx discrete fets at frequencies greater than 10 ghz. when using the vmmk-1xxx fets at low frequencies, some amount of source inductance may actually be required. in this case, the vias may be placed further away from the device to enhance stability. consult individual application notes for more information. due to the proximity of the vias to the edge of the vmmk device (less than .003 ), it is recommended that the vias be flled to minimize wicking of the solder from under the vmmk device. in addition, since the edge of the vias is slightly outside of the solder mask area, the vias should be flled. vias can be flled with a conductive via fll material or a non-conductive via fll material. possible non-conductive via fll materials include: san-ei kagaku php-900 ir6 taiyo ink hb 12000 db4 dielectric prepreg material solder mask material as a general rule, if a via is within .004 (100u) of the edge of the soldermask but not under the device, then the via should be flled. any via which is covered by the solder mask and is beyond .004 (100u) of the solder mask edge can be uncapped and unflled as it is not at risk of wicking away solder from the device. if for any reason it is required to include a via or vias under a vmmk device, then the vias should be flled and capped. a capped via is a plated over flled via. if a flled but uncapped via is placed under the device, there will not be enough solderable surface area for device attach- ment. if an unflled and uncapped via is placed directly under the ground pad, then the liquid solder will fow into the open via hole during the refow process and deplete the solder volume to varying degrees from under the ground pad. depletion of the solder volume due to unflled vias may lead to a weak solder joint, poor grounding of the device, and/or stresses compromising the structural integrity of the package. the recommended footprint provides a solder joint that meets jedec standards for die shear, and provides sufcient adhesion of the ground lead such that the mechanical integrity of the package remains intact should any minor deformation of the board occur due to thermal shock.
10 ordering information part number devices per container container VMMK-2403-BLKG 100f antistaticfbag vmmk-2403-tr1g 5000 7freel package dimension outline reel orientation device orientation top view end view ? fy ? fy ? fy ? fy 8 mm 4 mm note: ?c? = device code ?y? = month code u s e r f e e d d i r e c ti o n not e: all dimensions ar e in mm a e d d ie dimension: d im range unit d 1.004 - 1.085 mm e 0.500 - 0.585 mm a 0.225 - 0.275 mm user feed direction carrier tape reel
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2012 avago technologies. all rights reserved. av02-2003en - december 26, 2012 notice: 1.f 10fsprocketfholefpitchfcumulativeftolerancefisf0.1mm. 2.f pocketfpositionfrelativeftofsprocketfholefmeasuredfasftruefpositionf offpocketfnotfpocketfhole. 3.f aof&fbofmeasuredfonfafplacef0.3mmfabovefthefbottomfoffthef pocketftoftopfsurfacefoffthefcarrier. 4.f kofmeasuredffromfafplanefonfthefinsidefbottomfoffthefpocketftof theftopfsurfacefoffthefcarrier. 5.f carrierfcamberfshallfbefnotfthanf1mfperf100mmfthroughfaflengthf off250mm.f unit:fmm symbol spec. k1 C po 4.00.10 p1 4.00.10 p2 2.00.05 do 1.550.05 d1 0.50.05 e 1.750.10 f 3.500.05 10po 40.00.10 w 8.00.20 t 0.200.02 note: 2 p2 note: 1 po do b b note: 2 e f w a a p1 d1 r0.1 ao 5 (max) scale 5:1 aa section ao = 0.730.05 mm bo = 1.260.05 mm ko = 0.35 +0.05 mm +0 scale 5:1 bb section 5 (max) bo ko t tape dimensions

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